(Hong Kong)
Product Summary
The MJE180 is a silicon power transistor. It is designed for low power audio amplifier and low current, high speed switching applications.
Parametrics
MJE180 absolute maximum ratings: (1)Collector-Base Voltage VCB: 60Vdc; (2)Collector-Emitter Voltage VCEO: 40Vdc; (3)Emitter-Base Voltage VEB: 7.0Vdc; (4)Collector Current - Continuous IC: 3.0Adc; - Peak IC: 6.0Adc; (5)Base Current IB: 1.0Adc; (6)Total Power Dissipation @ TC = 25℃ PD: 1.5W;Derate above 25℃ PD: 0.012W/℃; (7)Total Power Dissipation @ TA = 25℃ PD: 12.5W;Derate above 25℃ PD: 0.1W/℃; (8)Operating and Storage Junction Temperature Range TJ, Tstg: -65 to +150℃.
Features
MJE180 features: (1)Collector-Emitter Sustaining Voltage -VCEO(sus) = 40 Vdc; (2)DC Current Gain -hFE = 30 (Min) @ IC = 0.5 Adc; hFE = 12 (Min) @ IC = 1.5 Adc; (3)Current-Gain - Bandwidth Product -fT = 50 MHz (Min) @ IC = 100 mAdc; (4)Annular Construction for Low Leakages -ICBO = 100 nA (Max) @ Rated VCB; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Machine Model, C Human Body Model, 3B; (7)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MJE18004 |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 1000V 75W NPN |
Data Sheet |
Negotiable |
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MJE18004D2G |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 1000V 75W NPN |
Data Sheet |
Negotiable |
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MJE18004G |
ON Semiconductor |
Transistors Bipolar (BJT) 5A 1000V 75W NPN |
Data Sheet |
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MJE180G |
ON Semiconductor |
Transistors Bipolar (BJT) 3A 40V 12.5W NPN |
Data Sheet |
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MJE180STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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MJE180PWD |
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TRANSISTOR NPN 40V 3A |
Data Sheet |
Negotiable |
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MJE18009 |
Other |
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Data Sheet |
Negotiable |
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MJE18008G |
ON Semiconductor |
Transistors Bipolar (BJT) 8A 450V 125W NPN |
Data Sheet |
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