(Hong Kong)
Product Summary
The TC554001AF-70L is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology of TC554001AF-70L provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns.
Parametrics
TC554001AF-70L absolute maximum ratings: (1)Power Supply Voltage: -0.3~7.0 V; (2)Input Voltage: -0.3~7.0 V; (3)Input/Output Voltage: -0.5~VDD + 0.5 V; (4)Power Dissipation: 0.6 W; (5)Soldering Temperature (10s): 260 ℃; (6)Storage Temperature: -55~150 ℃; (7)Operating Temperature: 0~70 ℃.
Features
TC554001AF-70L features: (1)Low-power dissipation Operating: 55 mW/MHz (typical); (2)Single power supply voltage of 5 V ±10%; (3)Power down features using CE; (4)Data retention supply voltage of 2.0 to 5.5 V; (5)Direct TTL compatibility for all inputs and outputs.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 TC554001AF-70LEL |
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IC SRAM 4MBIT 70NS 32SOP |
Data Sheet |
Negotiable |
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