(Hong Kong)
Product Summary
The TD62004AF is a NPN silicon germanium RF transistor.
Parametrics
TD62004AF maximum ratings: (1)Collector-emitter voltage VCEO: 2.3 V; (2)Collector-emitter voltage VCES: 7.5; (3)Collector-base voltage VCBO: 7.5; (4)Emitter-base voltage VEBO: 1.2; (5)Collector current IC: 80 mA; (6)Base current IB: 3; (7)Total power dissipationTS ≤ 95℃ Ptot: 185 mW; (8)Junction temperature Tj: 150 ℃; (9)Ambient temperature TA: -65 to 150℃; (10)Storage temperature Tstg -65 to 150℃.
Features
TD62004AF features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz; (5)Maximum stable gain. Gms = 21.5 dB at 1.8 GHz. Gma = 11 dB at 6 GHz; (6)Gold metallization for extra high reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 TD62004AF(S) |
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IC DRIVER DARL SINK 7-CH 16-SOP |
Data Sheet |
Negotiable |
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TD62004AFG |
Other |
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Data Sheet |
Negotiable |
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TD62004AFG(O,N,EL) |
Toshiba |
Transistors Darlington 7-Ch NPN Driver 500mA 50V 10.5k |
Data Sheet |
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TD62004AFG(O,N) |
Toshiba |
Transistors Darlington 7-Ch NPN Driver 500mA 50V 10.5k |
Data Sheet |
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TD62004AFG(5,S) |
Toshiba |
Transistors Darlington 7CH. 50V/.5A IFD IC |
Data Sheet |
Negotiable |
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TD62004AFG(5,S,EL) |
Toshiba |
Transistors Darlington 7CH. 50V/.5A IFD IC |
Data Sheet |
Negotiable |
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