(Hong Kong)
Product Summary
The TD9944TG is dual N-channel enhancement-mode vertical DMOS FET. The dual low threshold enhancement-mode (normally-off) transistor TD9944TG utilizes a vertical DMOS structure and Supertex wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistor and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, the TD9944TG is free from thermal runaway and thermally induced secondary breakdown. Supertex vertical DMOS FET TD9944TG is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Parametrics
TD9944TG absolute maximum ratings: (1)Configuration: Dual Drain; (2)Transistor Polarity: N-Channel; (3)Resistance Drain-Source RDS (on): 6 Ohms; (4)Drain-Source Breakdown Voltage: 240 V; (5)Gate-Source Breakdown Voltage: +/- 20 V; (6)Continuous Drain Current: 1 A; (7)Maximum Operating Temperature: + 150℃; (8)Mounting Style: SMD/SMT; (9)Package / Case: SOIC-8; (10)Minimum Operating Temperature: - 55℃.
Features
TD9944TG features: (1)Dual N-channel devices; (2)Low threshold — 2.0V max.; (3)High input impedance; (4)Low input capacitance — 125pF max.; (5)Fast switching speeds; (6)Low on resistance; (7)Free from secondary breakdown; (8)Low input and output leakage.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||
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 TD9944TG |
Supertex |
MOSFET 240V 6Ohm |
Data Sheet |
Negotiable |
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TD9944TG-G |
Supertex |
MOSFET 240V 6Ohm |
Data Sheet |
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