Product Summary

The TE28F160S3-75 is a FlashFile memory. It provides high-density, low-cost, non-volatile, read/write storage solutions for a wide range of applications. The TE28F160S3-75 is available at various densities in the same package type. Their symmetrically-blocked architecture, flexible voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards. Enhanced suspend capabilities provide an ideal solution for code or data storage applications.

Parametrics

TE28F160S3-75 absolute maximum ratings: (1)Temperature under Bias: –40 to +85℃; (2)Storage Temperature: –65 to +125℃; (3)Voltage On Any Pin (except VCC and VPP ): –0.5V to + VCC +0.5V; (4)VCC Supply Voltage: –0.2V to + VCC+0.5V(1); (5)VPP Update Voltage during Block Erase, Flash Write, and Lock-Bit Configuration: –0.2V to +7.0V; (6)Output Short Circuit Current: 100 mA.

Features

TE28F160S3-75 features: (1)Two 32-Byte Write Buffers: 2.7 μs per Byte Effective Programming Time; (2)Low Voltage Operation: 2.7V or 3.3V VCC; 2.7V, 3.3V or 5V VPP; (3)100 ns Read Access Time (16 Mbit); 110 ns Read Access Time (32 Mbit); (4)High-Density Symmetrically-Blocked Architecture: 32 64-Kbyte Erase Blocks (16 Mbit); 64 64-Kbyte Erase Blocks (32 Mbit); (5)System Performance Enhancements: STS Status Output; (6)Industry-Standard Packaging: μBGA package, SSOP, and TSOP (16 Mbit); μBGA package and SSOP (32 Mbit); (7)Cross-Compatible Command Support: Intel Standard Command Set; Common Flash Interface (CFI); Scaleable Command Set (SCS); (8)100,000 Block Erase Cycles; (9)Enhanced Data Protection Features: Absolute Protection with VPP = GND; Flexible Block Locking; Block Erase/Program Lockout during Power Transitions; (10)Configurable ×8 or ×16 I/O; (11)Automation Suspend Options: Program Suspend to Read; Block Erase Suspend to Program; Block Erase Suspend to Read; (12)ETOX V Nonvolatile Flash Technology.

Diagrams

TE28F160S3-75 block diagram

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