(Hong Kong)
Product Summary
The AP9916H is an Advanced Power MOSFET from APEC. It provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Parametrics
AP9916H absolute maximum ratings: (1)Drain-Source Voltage, VDS: 18V; (2)Gate-Source Voltage, VGS: ±12V; (3)Continuous Drain Current, VGS @ 4.5V, ID at Tc=25℃: 35A; (4)Continuous Drain Current, VGS @ 4.5V, ID at Tc=125℃: 16A; (5)Pulsed Drain Current, IDM: 90A; (6)Total Power Dissipation, PD at Tc=25℃: 50W; (7)linear derating factor: 0.4W/℃; (8)Operating Junction Temperature Range, Tj: -55 to 150℃; (9)storage temperature range: -55 to 150℃.
Features
AP9916H features: (1)Low on-resistance; (2)Capable of 2.5V gate drive; (3)Low drive current; (4)Single Drive Requirement.
Diagrams
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