RC28F128J3C150

StrataFlash memory, BGA, 100 mA

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.00~7.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.00~7.00

PartNumber:: RC28F128J3C150

Brand:: Intel Corporation - Intel | Pack: BGA | D/C: 05+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Kelly Huang's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-07-08

From Other Seller

Part Number:RC28F128J3C150
US $1.00 - 7.00
AT25256AW-10SU-2.7

US $0.65 - 1.50 / Piece
(0) Remove
QM75DY-H

US $16.00 - 30.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The RC28F128J3C150 is a StrataFlash memory. It contains high-density memories organized as 32 Mbytes or 16Mwords (256-Mbit, available on the 0.18μm lithography process only), 16 Mbytes or 8 Mwords (128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). The RC28F128J3C150 can be accessed as 8- or 16-bit words. The RC28F128J3C150 128-Mbit device is organized as one-hundredtwenty-eight 128-Kbyte (131,072 bytes) erase blocks. The RC28F128J3C150 64-Mbit device is organized as sixtyfour 128-Kbyte erase blocks while the 32-Mbit device contains thirty-two 128-Kbyte erase blocks. A 128-bit Protection Register has multiple uses, including unique flash device identification.

Parametrics

RC28F128J3C150 absolute maximum ratings: (1)Temperature under Bias Extended: –40 to +85℃; (2)Storage Temperature: –65 to +125℃; (3)Voltage On Any signal: –2.0 V to +5.0 V; (4)Output Short Circuit Current: 100 mA.

Features

RC28F128J3C150 features: (1)110/115/120/150 ns Initial Access Speed; (2)125 ns Initial Access Speed (256 Mbit density only); (3)25 ns Asynchronous Page mode Reads; (4)30 ns Asynchronous Page mode Reads (256Mbit density only); (5)32-Byte Write Buffer; (6)6.8 μs per byte effective programming time; (7)128-bit Protection Register; (8)64-bit Unique Device Identifier; (9)64-bit User Programmable OTP Cells; (10)Absolute Protection with VPEN = GND; (11)Individual Block Locking; (12)Block Erase/Program Lockout during Power Transitions.