Product Summary
The VNQ660SP is a monolithic device made by using STMicroelectronics VIPower M0-3 Technology, intended for driving resistive or inductive loads with one side connected to ground. The VNQ660SP has four independent channels. Builtin thermal shutdown and output current limitation protect the chip from over temperature and short circuit.
Parametrics
VNQ660SP absolute maximum ratings: (1)VCC Supply voltage: 41 V; (2)VCC Reverse DC supply voltage: - 0.3 V; (3)IOUT DC output current, per each channel: Internally limited A; (4)IR Reverse DC output current, per each channel: - 15 A; (5)IIN Input current: +/- 10 mA; (6)ISTAT Status current: +/- 10 mA; (7)IGND DC ground current at TC < 25℃: -200 mA; (8)VESD Electrostatic discharge (human body model: R=1.5KΩ; C = 100pF) - INPUT: 4000 V; - STATUS: 4000V; - OUTPUT: 5000 V; - VCC: 5000V; (9)EMAX Maximum switching energy (L = 0.38mH; RL = 0Ω; Vbat = 13.5V; Tjstart = 150oC; IL = 14A): 101 mJ; (10)Ptot Power dissipation at TC = 25℃: 114 W; (11)Tj Junction operating temperature - 40 to 150 ℃; (12)Tstg Storage temperature: - 65 to 150 ℃; (13)EC Non repetitive clamping energy at TC = 25℃: 150 mJ.
Features
VNQ660SP features: (1)CMOS compatible inputs; (2)Off state open load detection; (3)Undervoltage and overvoltage shutdown; (4)Overvoltage clamp; (5)Thermal shutdown; (6)Current limitation; (7)Very low standby power dissipation; (8)Protection against loss of ground and loss of VCC; (9)Reverse battery protection.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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VNQ660SP |
STMicroelectronics |
Power Switch ICs - Power Distribution Quad Channel Hi-Side |
Data Sheet |
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VNQ660SP13TR |
STMicroelectronics |
Power Switch ICs - Power Distribution Quad Channel Hi-Side |
Data Sheet |
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VNQ660SP-E |
STMicroelectronics |
Power Switch ICs - Power Distribution Quad Channel Hi-Side |
Data Sheet |
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VNQ660SPTR-E |
STMicroelectronics |
Power Switch ICs - Power Distribution Quad Channel Hi-Side |
Data Sheet |
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